Electromagnetic waves with frequencies between microwave and infrared light, also known as terahertz radiation, are leveraged ...

Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...

A next-generation Schottky barrier diode achieves the rare combination of ultra-low forward voltage and reverse current, ...

ROHM has developed an innovative Schottky barrier diode that overcomes the traditional VF/IR trade-off. This way, it delivers ...

Earlier this week, ROHM Co., Ltd. announced the development of a Schottky barrier diode that achieves both low forward voltage and low reverse current, addressing a longstanding technical challenge ...

ROHM's Innovative Schottky Barrier Diode Combines low VF with low IR which is ideal for protection applications. VF vs IR ...

This application note presents the real Schottky diodes as the best choice for lowest forward voltage drop. This document describes the low, medium and high voltage level applications, as well as ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added the “TRSxxx120Hx Series” of 1200V products to its lineup of third-generation silicon carbide ...

The 178-product lineup assembled by ROHM helps contribute to lower power consumption, smaller size, and higher reliability in a wider range of applications. A diode is one of the basic components ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...

6/3/2003 Single Die MOSFET and Schottky Barrier Diode for DC-DC Converters To meet the requirement for greater integration of devices and ever-smaller 6/3/2003 Single Die MOSFET and Schottky Barrier ...

Imec showed this week’s IEDM meeting its co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power IC on 200 mm substrates.